DC and Microwave Characteristics of Lg 20 nm T-Gate Enhancement Mode Al0.5Ga0.5N/AlN/GaN/Al0.08Ga0.92N High Electron Mobility Transistor for Next Generation High Power Millimeter Wave Applications
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Published:2018-02-01
Issue:2
Volume:13
Page:183-189
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Murugapandiyan P.,Ravimaran S.,William J.,Bordekar Laxmikant D.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials