Design of four‐state inverter using quantum dot gate‐quantum dot channel field effect transistor
Author:
Affiliation:
1. Department of Electrical and Computer EngineeringUniversity of Connecticut371 Fairfield Way, U‐2157StorrsCT06269USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.0570
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1. Multi-valued logic function implementation with novel current-mode logic gates
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3. Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers
4. Improved device structure of quantum dot gate FET to get more stable intermediate state;Karmakar S.;Electron. Lett.,2012
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