Dopant passivation occurring during electron cyclotron resonance (ECR) CH4/H2 dry etching of InGaAs/AlInAs HEMTs-Reference-Cited by-同舟云学术

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Dopant passivation occurring during electron cyclotron resonance (ECR) CH4/H2 dry etching of InGaAs/AlInAs HEMTs

Published:1995-03-02 Issue:5 Volume:31 Page:406-408
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Ren F.,Sivco D.L.,Kuo J.M.,Pearton S.J.,Cho A.Y.,Wilson R.G.,Chen Y.K.,Lothian J.R.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19950284?crawler=true&mimetype=application/pdf

Reference7 articles.

1. Ali, F., Gupta, A., ‘HEMTs and HBTs: Devices, fabrication and circuits’, (Artech House Boston 1991)

2. Selective Dry Etching of AlGaAs-GaAs Heterojunction

3. Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6

4. Molecular beam epitaxy

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1. Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs;Solid-State Electronics;2002-09

2. Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors;Solid-State Electronics;2001-10

3. Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs;Solid-State Electronics;2001-09

4. Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors;Solid-State Electronics;2001-09

5. Device Damage During Low Temperature High-Density Plasma Chemical Vapor Deposition;Handbook of Advanced Plasma Processing Techniques;2000

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