High responsivity resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector for wavelength of ∼1 [micro sign]m at room temperature
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2009.0033?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Multi-stacked quantum dot resonant-cavity photodetector operating at 1.06 [micro sign]m
2. Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 μm
3. Tuning of Detection Wavelength in a Resonant-Cavity-Enhanced Quantum-Dot-Embedded Photodiode by Changing Detection Angle
4. Microcavity single-photon-emitting diode
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2. High-Speed Photodetectors Based on InGaAs/GaAs Quantum Well–Dots;Technical Physics Letters;2022-03
3. Frequency response and carrier escape time of InGaAs quantum well-dots photodiode;Optics Express;2021-11-22
4. Resonant cavity enhanced photodetectors;Photodetectors;2016
5. Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector;Advances in Condensed Matter Physics;2015
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