Frequency response and carrier escape time of InGaAs quantum well-dots photodiode-Reference-Cited by-同舟云学术

Frequency response and carrier escape time of InGaAs quantum well-dots photodiode

Published:2021-11-22 Issue:25 Volume:29 Page:40677
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Zhukov A. E.^ORCID,Blokhin S. A.,Maleev N. A.,Kryzhanovskaya N. V.^ORCID,Moiseev E. I.^ORCID,Nadtochiy A. M.,Mintairov S. A.^ORCID,Kalyuzhnyy N. A.,Zubov F. I.^ORCID,Maximov M. V.^ORCID

Funder

National Research University Higher School of Economics

Russian Science Foundation

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference35 articles.

1. 1.2 [micro sign]m highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink

2. 1.21 µm Continuous-Wave Operation of Highly Strained GaInAs Quantum Well Lasers on GaAs Substrates

3. Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

4. Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

5. Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction

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