Refractive index step and optical confinement in Ga0.86In0.14As0.13Sb0.87/Ga0.73Al0.87As0.02Sb0.98 double heterostructure lasers emitting at 2.2 μm-Reference-Cited by-同舟云学术

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Refractive index step and optical confinement in Ga0.86In0.14As0.13Sb0.87/Ga0.73Al0.87As0.02Sb0.98 double heterostructure lasers emitting at 2.2 μm

Published:1993 Issue:14 Volume:29 Page:1240
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Loural M.S.S.,Loural M.S.S.,Morosini M.B.Z.,Herrer-Pérez J.L.,von Zuben A.A.G.,da Silveira A.C.F.,Patel N.B.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19930829?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Joullié, A, Jia Hua, F., Karouta, F., Mani, H., and Alibert, C.: III-V alloys based on GaSb for optical communications at 2.0–4.5 μm., (SPIE, Optical Fiber Sources & Detectors 1985),587, p. 46–57

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1. Photoluminescence studies in highly Te-doped Ga1−xInxAsySb1−y epitaxial layers grown on GaSb by liquid phase epitaxy;Applied Surface Science;2004-11

2. Optical properties of tellurium-doped InxGa1 xAsySb1 yepitaxial layers studied by photoluminescence spectroscopy;Journal of Physics: Condensed Matter;2003-12-03

3. PHOTOLUMINESCENCE STUDIES OF GaInArSb HIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb;Surface Review and Letters;2002-10

4. Near-band-gap refractive index of GaSb;Materials Science and Engineering: B;1996-04

5. Measurement of refractive index of GaSb (1.8 to 2.56 [micro sign]m) using a prism;Electronics Letters;1996

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