PHOTOLUMINESCENCE STUDIES OF GaInArSb HIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb-Reference-Cited by-同舟云学术

PHOTOLUMINESCENCE STUDIES OF GaInArSb HIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb

Published:2002-10 Issue:05n06 Volume:09 Page:1645-1649
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

DÍAZ-REYES J.¹,CORONA-ORGANICHE E.¹,HERRERA-PÉREZ J. L.¹,ZARATE-CORONA O.²,MENDOZA-ALVAREZ J.³

Affiliation:

1. CICATA-IPN, Unidad Puebla, Acatlán 63, Col. La Paz, Puebla, Puebla 72160, Mexico

2. CIDS-BUAP, 14 sur y Av. San Claodio, Puebla, Puebla, 72570, Mexico

3. Depto. de Física, CINVESTAV-IPN, DF, 07000/Centro, Mexico

Abstract

Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of 3 × 1017 – 2 × 1020 cm -3 are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets of Sb 3 Te 2 in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor, BE 2, disappears.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X02004141

Reference15 articles.

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