High efficiency 0.5 W/A at 85°C strained multiquantum well lasers entirely grown by MOVPE on p-InP substrate
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19980440?crawler=true&mimetype=application/pdf
Reference5 articles.
1. High temperature operation of 1.3 μm GaInAsP/Inp GRINSCH strained-layer quantum well lasers
2. Submilliamp threshold 1.3 µm strained MQW lasers with novel p-substrate buried-heterostructure grown by MOVPE using TBA and TBP
3. Gain and intervalence band absorption in quantum-well lasers
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1. Device characteristics and metal-dielectric high reflectivity coating analysis of λ ∼ 1.3 µm InGaAsP/InGaAsP MQW PBH lasers;physica status solidi (a);2009-08-11
2. Cavity length and temperature dependent characteristics of compressively strained InGaAsP MQW BH lasers with a two-step compositional SCH structure;Semiconductor Science and Technology;2008-08-11
3. Fabrication and modulation characteristics of InGaAsP/InGaAsP MQW DCPBH lasers at λ ∼ 1.57 μm;Applied Physics B;2007-12-06
4. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001
5. Data-format-free 622-Mbit/s/ch 12-channel parallel optical transmitter and receiver;Optoelectronic Interconnects VII; Photonics Packaging and Integration II;2000-04-27
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