Device characteristics and metal-dielectric high reflectivity coating analysis of λ ∼ 1.3 µm InGaAsP/InGaAsP MQW PBH lasers-Reference-Cited by-同舟云学术

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Device characteristics and metal-dielectric high reflectivity coating analysis of λ ∼ 1.3 µm InGaAsP/InGaAsP MQW PBH lasers

Published:2009-08-11 Issue:1 Volume:207 Page:217-223
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Leem J. W.,Yu J. S.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.200925166/fullpdf

Reference24 articles.

1. High temperature operation of 1.3 μm GaInAsP/Inp GRINSCH strained-layer quantum well lasers

2. High efficiency 0.5 W/A at 85°C strained multiquantum well lasers entirely grown by MOVPE on p-InP substrate

3. High-speed and uncooled operation of 1.3-/spl mu/m InGaAsP strain-compensated MQW BH lasers fabricated on patterned InP substrates

4. A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers

5. Low-threshold 1.5 mu m compressive-strained multiple- and single-quantum-well lasers

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