Cavity length and temperature dependent characteristics of compressively strained InGaAsP MQW BH lasers with a two-step compositional SCH structure
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Reliable 1.5 μm buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) lasers entirely grown by metalorganic vapour-phase epitaxy (MOVPE)
2. Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers
3. High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
4. Low-threshold 1.5 mu m compressive-strained multiple- and single-quantum-well lasers
5. Threshold current analysis of compressive strain (0-1.8%) in low-threshold, long-wavelength quantum well lasers
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1. Fabrication and analysis of highly-reflective metal-dielectric mirrors for high-performance semiconductor laser applications;Current Applied Physics;2016-02
2. Broadband high-reflective distributed Bragg reflectors based on amorphous silicon films for semiconductor laser facet coatings;Applied Optics;2015-02-04
3. Thermal Characteristics of 1.55-$\mu$m InGaAlAs Quantum Well Buried Heterostructure Lasers;IEEE Journal of Quantum Electronics;2010-05
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