Author:
Mack M.P.,Via G.D.,Abare A.C.,Hansen M.,Kozodoy P.,Keller S.,Speck J.S.,Mishra U.K.,Coldren L.A.,DenBaars S.P.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference5 articles.
1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
2. Group III nitride semiconductors for short wavelength light-emitting devices
3. Nakamura, S., and Fasol, G.: ‘The blue laser diode: GaN based light emitters and lasers’, (Springer Berlin, New York 1997)
4. Coldren, L.A., and Corzine, S.W.: ‘Diode lasers and photonic integrated circuits’, (John Wiley & Sons, Inc. New York 1995)
Cited by
25 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献