High-performance 5.2 GHz LNA with on-chip inductor to provide ESD protection-Reference-Cited by-同舟云学术

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High-performance 5.2 GHz LNA with on-chip inductor to provide ESD protection

Published:2001 Issue:7 Volume:37 Page:467
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Leroux P.,Steyaert M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el:20010271?crawler=true&mimetype=application/pdf

Reference2 articles.

1. Janssens, J.: ‘Submicron CMOS cellular receiver front-ends’, 2001, PhD, expected Q2

2. MOS noise performance under impedance matching constraints

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