0.25 [micro sign]m gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20010582?crawler=true&mimetype=application/pdf
Reference5 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
3. High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates
4. GaN/AlGaN high electron mobility transistors with f of 110 GHz
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1. MOLECULAR BEAM EPITAXY FOR III-N MATERIALS;III-Nitride Semiconductor Materials;2006-03
2. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy;Journal of Applied Physics;2005-07
3. First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology;Microwave and Optical Technology Letters;2005
4. The influence of composition and unintentional doping on the two-dimensional electron gas density in AlGaN/GaN heterostructures;Journal of Electronic Materials;2004-05
5. Characterisation of iridium Schottky contacts on n-AlxGa1−xN;Electronics Letters;2003
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