High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970933?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
2. Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation‐doped field‐effect transistors
3. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
4. AlGaN/GaN HEMTs grown on SiC substrates
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