Enhancement of minority carrier transport in forward biased GaN p-n junction
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20010605?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices
2. Electron beam induced current measurements of minority carrier diffusion length in gallium nitride
3. Deep levels and persistent photoconductivity in GaN thin films
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