Electron Hall mobility calculations and alloy scattering in Ga0.47In0.53As
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19810265?crawler=true&mimetype=application/pdf
Reference21 articles.
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs;Microelectronic Engineering;2011-07
2. Thermoelectric figure of merit of(In0.53Ga0.47As)0.8(In0.52Al0.48As)0.2III-V semiconductor alloys;Physical Review B;2010-06-10
3. Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD;IEICE Electronics Express;2008
4. Electron mobility in InO.53GaO.47As as a function of concentration and temperature;Microelectronics Journal;1995-10
5. Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies;Journal of Electronic Materials;1995-07
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