Over 1 W fibre-coupled power from single semiconductor source for pumping of Raman fibre amplifiers and erbium-doped fibre amplifiers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20000382?crawler=true&mimetype=application/pdf
Reference6 articles.
1. 100 nm bandwidth flat-gain Raman amplifiers pumped and gain-equalised by 12-wavelength-channel WDM laser diode unit
2. Very high power 1.48 [micro sign]m semiconductor lasers
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