Very high power 1.48 [micro sign]m semiconductor lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990665?crawler=true&mimetype=application/pdf
Reference6 articles.
1. High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
2. High performance InGaAsP/InP strained-layer MQW lasers with reversed-mesa ridge-waveguide structures
3. 370 mW coupled into singlemode optical fibre from 1.48 [micro sign]m unstable cavity laser
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2. High power single-mode (λ=1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures;Semiconductors;2002-11
3. Pump Sources for Optical Fiber Amplifiers.;The Review of Laser Engineering;2002
4. Tolerant low-loss three-lens coupling system for 1.48-μm unstable-cavity lasers;SPIE Proceedings;2000-03-29
5. Tolerant low-loss three-lens coupling system for 1.48-μm unstable-cavity lasers;IEEE Photonics Technology Letters;2000-03
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