0.1 [micro sign]m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmax-Reference-Cited by-同舟云学术

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0.1 [micro sign]m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmax

Published:2000 Issue:16 Volume:36 Page:1428
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Höck G.,Hackbarth T.,Käb N.,Herzog H.-J.,Enciso M.,Aniel F.,Crozat P.,Adde R.,Kohn E.,König U.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20000964?crawler=true&mimetype=application/pdf

Reference5 articles.

1. A 70-GHz f/sub T/ low operating bias self-aligned p-type SiGe MODFET

2. High performance 0.25 [micro sign]m p-type Ge/SiGe MODFETs

3. Extremely high transconductance Ge/Si/sub 0.4/Ge/sub 0.6/ p-MODFET's grown by UHV-CVD

4. High-performance 0.1 [micro sign]m gate-length Ge/Sio0.4Ge0.6 p-channel MODFETs

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electroluminescence of Ge/SiGe p-MODFETs;Materials Science in Semiconductor Processing;2005-02

2. Si/SiGe heterostructure parameters for device simulations;Semiconductor Science and Technology;2004-08-20

3. Noise in Si/SiGe and Ge/SiGe MODFET;SPIE Proceedings;2004-05-25

4. Microwave performances of silicon heterostructure-FETs;Applied Surface Science;2004-03

5. High-Performance SiGe MODFET Technology;MRS Proceedings;2004

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