High-Performance SiGe MODFET Technology-Reference-Cited by-同舟云学术

High-Performance SiGe MODFET Technology

Published:2004 Issue: Volume:809 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Koester S. J.,Chu J. O.,Saenger K. L.,Ouyang Q. C.,Ott J.A.,Canaperi D. F.,Tornello J. A.,Jahnes C.V.,Steen S. E.

Abstract

ABSTRACTAn overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference28 articles.

1. Low temperature analysis of 0.25 μm T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's

2. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

3. 80 nm gate-length Si∕Si0.7Ge0.3 n-MODFET with 194 GHz fmax

4. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

5. SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max/

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