Author:
Madan Anuj,Cressler John D.,Koester Steven J.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Si/SiGe high-speed field-effect transistors;Ismail;IEDM Tech Dig,1995
2. Koester SJ, Chu JO, Saenger KL, Ouyang QC, Ott JA, Canaperi DF, et al. High performance SiGe MODFET technology. In: Matty Caymax, Ken Rim, Shigeaki Zaima, Erich Kasper, Paulo F.P. Fichtner, editors. High-mobility Group-IV materials and devices. Mater. res. soc. symp. proc. 809, Warrendale, PA; 2004. B7.2.
3. Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET’s grown by UHV-CVD;Koester;IEEE Electron Dev Lett,2000
4. SiGe p-MODFETs on silicon-on-sapphire substrates with 116GHz fmax;Koester;IEEE Electron Device Lett,2001
5. 80nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194GHz fmax;Koester;Elect Lett,2000
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