Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20000039?crawler=true&mimetype=application/pdf
Reference11 articles.
1. Pt/Ti Ohmic contact top++‐InGaAsP (1.3 μm) formed by rapid thermal processing
2. Pd/Zn/Pd/Au and Pd/Zn/Au/LaB6/Au ohmic contacts to p‐type In0.53Ga0.47As
3. Low resistance Ohmic contact scheme (∼μΩ cm2) top-InP
4. Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents
5. Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources
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