Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120071
Reference9 articles.
1. Gallium-Arsenide Tunnel Diodes
2. High current density carbon‐doped strained‐layer GaAs (p+)‐InGaAs(n+)‐GaAs(n+)p‐ntunnel diodes
3. n‐p‐(p+‐n+)‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well laser with p+‐n+ GaAs‐InGaAs tunnel contact on n‐GaAs
4. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
5. Native oxide‐embedded AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers
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