Backside copper metallisation of GaAs MESFETs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20000917?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Tantalum as a diffusion barrier between copper and silicon
2. Nanostructured Ta-Si-N diffusion barriers for Cu metallization
3. Kittel, C.: ‘Introduction to solid state physics’, (John Wiley & Sons 1996),7th edn. p. 126, 160
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