Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology-Reference-Cited by-同舟云学术

Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology

Published:2019-05 Issue:6 Volume:14 Page:618-622
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Panda Deepak Kumar¹²,Lenka Trupti Ranjan²

Affiliation:

1. School of ElectronicsVIT‐AP UniversityAmravathiAndhra Pradesh522237India

2. Microelectronics and VLSI Design GroupDepartment of Electronics and Communication EngineeringNational Institute of TechnologySilcharAssam788010India

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.5499

Reference13 articles.

1. Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT

2. Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

3. Enhancement‐mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer

4. Investigation of gate induced noise in E-mode GaN MOS-HEMT and its effect on noise parameters

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