Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology
Author:
Affiliation:
1. School of ElectronicsVIT‐AP UniversityAmravathiAndhra Pradesh522237India
2. Microelectronics and VLSI Design GroupDepartment of Electronics and Communication EngineeringNational Institute of TechnologySilcharAssam788010India
Publisher
Institution of Engineering and Technology (IET)
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.5499
Reference13 articles.
1. Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT
2. Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
3. Enhancement‐mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer
4. Investigation of gate induced noise in E-mode GaN MOS-HEMT and its effect on noise parameters
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