0.2 µm AlSb/InAs HEMTs with 5 V gate breakdown voltage
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941316?crawler=true&mimetype=application/pdf
Reference4 articles.
1. High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors
2. Impact ionisation in high-output-conductance region of 0.5 μm AlSb/InAs HEMTs
3. Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strong emission from As monolayers in AlSb;Physical Review B;1999-01-15
2. Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers;Applied Physics Letters;1998-03-09
3. AlSb/InAs HEMT's for low-voltage, high-speed applications;IEEE Transactions on Electron Devices;1998
4. Observation of electrically resettable negative persistent photoconductivity in InAs/AlSb single quantum wells;Applied Physics Letters;1996-09-02
5. A composite quantum well field‐effect transistor;Applied Physics Letters;1996-07
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