Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121010
Reference18 articles.
1. Measurement of the hot-electron conductivity in semiconductors using ultrafast electric pulses
2. Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
3. Surface-layer modulation of electron concentrations in InAs–AlSb quantum wells
4. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
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