Room-temperature intersubband emission from GaInAs–AlAsSb quantum cascade structure
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20046618?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Room temperature operation of InAs∕AlSb quantum cascade lasers
2. Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs
3. λ∼4–5.3 μm intersubband emission from InGaAs–AlAsSb quantum cascade structures
4. InGaAs-AlAsSb quantum cascade structures emitting at 3.1 [micro sign]m
5. InAs/AlSb quantum-cascade light-emitting devices in the 3–5 μm wavelength region
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1. Improved performance of In0.6Ga0.4As∕AlAs0.67Sb0.33∕InP quantum cascade lasers by introduction of AlAs barriers in the active regions;Applied Physics Letters;2007-07-30
2. Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasers;Journal of Crystal Growth;2007-04
3. Electronic and thermal properties of Sb-based QCLs operating in the first atmospheric window;SPIE Proceedings;2007-02-08
4. Distributed-feedback GaInAs∕AlAsSb quantum-cascade lasers operating at 300K;Applied Physics Letters;2006-05-15
5. Room-temperature short-wavelength (λ∼3.7–3.9μm) GaInAs∕AlAsSb quantum-cascade lasers;Applied Physics Letters;2006-03-20
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