λ∼4–5.3 μm intersubband emission from InGaAs–AlAsSb quantum cascade structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655691
Reference15 articles.
1. Continuous-wave operation of quantum cascade laser emitting near 5.6 [micro sign]m
2. High-power continuous-wave operation of a 6 μm quantum-cascade laser at room temperature
3. Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature
4. Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs
5. InAs/AlSb quantum-cascade light-emitting devices in the 3–5 μm wavelength region
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1. Experimental and theoretical study of cross-phase modulation in InGaAs/AlAsSb coupled double quantum wells with a AlGaAs coupling barrier;Physical Review B;2009-07-10
2. Semiconductor Material Systems for Quantum Cascade Lasers;The Review of Laser Engineering;2008
3. Physics, growth, and performance of (In,Ga)As–AlP/InP quantum-cascade lasers emitting atλ < 4 μm;physica status solidi (b);2007-08
4. Short-Wavelength $(\lambda\approx 3.6\ \mu{\hbox {m}})$${\hbox {In}}_{0.73}{\hbox {Ga}}_{0.27}{\hbox {As–AlAs–InP}}$ Quantum-Cascade Laser;IEEE Journal of Quantum Electronics;2007-01
5. On the determination of the structural parameters of GaxIn1−xAs/AlAsySb1−y superlattices by X-ray diffraction;Journal of Crystal Growth;2006-12
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