AlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p ‐cladding for high pulsed power emission
Author:
Affiliation:
1. Department of Electronics University of York York UK
2. Department of Electrical and Information Engineering University of Oulu Oulu Finland
3. A F Ioffe Physico‐Technical Institute St. Petersburg Russia
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/ote2.12033
Reference32 articles.
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3. High power 1.5 µm pulsed laser diode with asymmetric waveguide and active layer near p‐cladding;Hallman L.W.;IEEE Photon Technol. Lett.,2019
4. Hallman L.W. et al.:Double asymmetric structure 1.5µm high power pulsed laser diodes. In:Proceedings of 2019 IEEE Conference on High Power Laser Diodes and Systems (HPD) Coventry pp.19–20.IEEE(2019)
5. Semiconductor AlGaInAs/InP lasers with ultra‐narrow waveguides;Marmalyuk A.A.;Quantum Electron.,2017
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1. Threshold and power of pulsed red-emitting diode lasers with a bulk active layer near p-cladding under high-temperature operation;Optical and Quantum Electronics;2023-05-23
2. Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission;Semiconductor Science and Technology;2022-10-20
3. >25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer;Electronics Letters;2021-08-19
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