Double-asymmetric-structure 1.5 μ m high power laser diodes
Author:
Affiliation:
1. University of Oulu,Circuits and Systems Research Unit,Finland,90014
2. University of York,Dept of Electronic Engineering,YO10 4LE,UK
3. TUT,Optoelectronics Research Centre,Tampere,Finland
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8935099/8938599/08938671.pdf?arnumber=8938671
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. >25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer;Electronics Letters;2021-08-19
2. AlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p ‐cladding for high pulsed power emission;IET Optoelectronics;2021-03-30
3. Asymmetric-waveguide, short cavity designs with a bulk active layer for high pulsed power eye-safe spectral range laser diodes;Semiconductor Science and Technology;2020-07-01
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