Ultra-high-intensity 1550-nm single junction pulsed laser diodes-Reference-Cited by-同舟云学术

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Ultra-high-intensity 1550-nm single junction pulsed laser diodes

Published:2011-05-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Laser Technology for Defense and Security VII
language:
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Author:

Boucher J. F.,Callahan John J.

Publisher

SPIE

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on 1550 nm Human Eye-Safe High-Power Tunnel Junction Quantum Well Laser;Micromachines;2024-08-17

2. Comparison of high power red-emitting diode laser designs for medical applications;Optical and Quantum Electronics;2024-04-26

3. Implementation of energy barrier layers for 1550 nm high-power laser diodes;Journal of Luminescence;2023-11

4. Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths;Nanomaterials;2023-10-11

5. InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure;AIP Advances;2023-07-01

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