Threshold current reduction in InGaN MQW laser diode with /4 air/semiconductor Bragg reflectors-Reference-Cited by-同舟云学术

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Threshold current reduction in InGaN MQW laser diode with /4 air/semiconductor Bragg reflectors

Published:2000 Issue:20 Volume:36 Page:1706
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Marinelli C.,Sargent L.J.,Wonfor A.,Rorison J.M.,Penty R.V.,White I.H.,Heard P.J.,Hasnain G.,Schneider R.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20001230?crawler=true&mimetype=application/pdf

Reference7 articles.

1. Nakamura, S., and Fasol, G.: ‘The blue laser diode’, (Springer Berlin 1997)

2. Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser

3. InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

4. A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg Reflectors

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1. Fabrication of highly reflective gratings in 1.5μm semiconductor lasers using focused ion beam-based etching;Microelectronic Engineering;2010-11

2. Design and fabrication of a midinfrared photonic crystal defect cavity in indium antimonide;Journal of Optics A: Pure and Applied Optics;2009-03-18

3. Study and formation of 2D microstructures of sapphire by focused ion beam milling;Microelectronic Engineering;2008-03

4. Focused ion beam etched nitride/air DBRs as cavity mirror facets of violet InGaN/GaN multiple-quantum well laser diodes;physica status solidi (c);2007-01

5. Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction;Applied Physics Letters;2006-04-24

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