Focused ion beam etched nitride/air DBRs as cavity mirror facets of violet InGaN/GaN multiple-quantum well laser diodes-Reference-Cited by-同舟云学术

Focused ion beam etched nitride/air DBRs as cavity mirror facets of violet InGaN/GaN multiple-quantum well laser diodes

Published:2007-01 Issue:1 Volume:4 Page:196-199
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Dai Tao,Zhang Bei,Zhang ZhenSheng,Xu Jun,Chen WeiHua,Li Rui,Bao Kui,Wei QiYuan,Xu Ke,Hu XiaoDong,Yang ZhiJian,Kang XiangNing,Pan YaoBo,Lu Min,Zhang GuoYi,Gan ZiZhao

Publisher

Wiley

Subject

Condensed Matter Physics

Reference11 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes

3. Reactive ion etching of deeply etched DBR-structures with reduced air-gaps for highly reflective monolithically integrated laser mirrors

4. Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching

5. Threshold current reduction in InGaN MQW laser diode with /4 air/semiconductor Bragg reflectors

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