Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19880413?crawler=true&mimetype=application/pdf
Reference6 articles.
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Excimer laser induced quantum well intermixing: a reproducibility study of the process for fabrication of photonic integrated devices;Optics Express;2015-01-16
2. Threshold currents of 1.3-μm bulk, 1.55-μm bulk, and 1.55-μm MQW DFB P-substrate partially inverted buried heterostructure laser diodes;IEEE Journal of Quantum Electronics;1998-03
3. 1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy;Journal of Crystal Growth;1993-02
4. Two-electrode DFB laser filter used as a wide tunable narrow-band FM receiver: tuning analysis, characteristics and experimental FSK-WDM system;Journal of Lightwave Technology;1992
5. InP based optoelectronics;Journal of Crystal Growth;1991-01
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