1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy-Reference-Cited by-同舟云学术

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1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy

Published:1993-02 Issue:1-4 Volume:127 Page:5-8
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bonnevie D.,Poingt F.,Le Gouézigou L.,Guichardon A.,Accard A.,Simes R.,Fernier B.,Goldstein L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

2. Over 245 mW 1.3 μm buried ridge stripe laser diodes onn‐substrate fabricated by the reactive ion beam etching technique

3. InP/InGaAsP buried mesa ridge laser: A new ridge laser with reduced leakage currents

4. Proc. 4th Intern. Conf. on InP and Related Compounds;Uchida,1992

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid source MBE growth and regrowth of 1.55 μm wavelength ridge lasers;Journal of Crystal Growth;1997-05

2. Chemical beam epitaxy of 1.55-um separate confinement heterostructure multiple quantum well laser diodes;Optical Engineering;1995-07-01

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