Deep donor trapping effects on the pulsed characteristics of AlGaAs/GaAs HEMTs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19860230?crawler=true&mimetype=application/pdf
Reference8 articles.
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content;Superlattices and Microstructures;2009-06
2. Long Time-Constant Trap Effects in Nitride Heterostructure Field Effect Transistors;MRS Proceedings;2000
3. Donor levels and the microscopic structure of theDXcenter inn-type Si-dopedAlxGa0.51−xIn0.49P grown by molecular-beam epitaxy;Physical Review B;1996-03-15
4. Device and circuit simulation of anomalous DX trap effects in DCFL and SCFL HEMT inverters;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1993
5. Modeling of short-pulse threshold voltage shifts due to DX centers in Al/sub x/Ga/sub 1-x/As/GaAs and Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As MODFET's;IEEE Transactions on Electron Devices;1991-06
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