Long Time-Constant Trap Effects in Nitride Heterostructure Field Effect Transistors

Abstract

ABSTRACTCurrent collapse effects in an Al0.25Ga0.75N/GaN HFET have been investigated under pulsed bias conditions, and a detailed investigation of current responses to changes in drain or gate bias voltage (drain-lag and gate-lag, respectively) has been performed. Three components of transient current response to changes in drain and gate bias voltages are distinguished. Surface treatment using KOH etching and the influence of pulsed bias conditions on threshold voltage are investigated to explore the origins of traps associated with each current transient component.