Linearity enhanced 2.4 GHz WLAN HBT power amplifier using digitally-controlled tunable output matching network with pHEMT switch in GaAs BiFET technology-Reference-Cited by-同舟云学术

Linearity enhanced 2.4 GHz WLAN HBT power amplifier using digitally-controlled tunable output matching network with pHEMT switch in GaAs BiFET technology

Published:2010 Issue:23 Volume:46 Page:1573
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Yoon S.-W.,Kim S.-I.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el.2010.2499?crawler=true&mimetype=application/pdf

Reference8 articles.

1. 2.4 GHz WLAN InGaP/GaAs Power Amplifier with Temperature Compensation Technique

2. Static and Dynamic Error Vector Magnitude Behavior of 2.4-GHz Power Amplifier

3. Design of Varactor-Based Tunable Matching Networks for Dynamic Load Modulation of High Power Amplifiers

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1. A highly linear power amplifier for WLAN;Journal of Semiconductors;2016-02

2. High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers;Solid-State Electronics;2014-02

3. Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation;Thin Solid Films;2013-11

4. The Reliability Study and Device Modeling for p-HEMT Microwave Power Transistors;ECS Transactions;2011-10-04

5. Dependences of the Characteristics of an InGaP/GaAs HBT for Applications in Power Amplifiers on the Structural Parameters;Journal of the Korean Physical Society;2011-08-12