Dark current reduction in InAs/InAsSb superlattice mid‐wave infrared detectors through restoration etch
Author:
Affiliation:
1. Skinfrared, LLCJ. Cecchi Venture Lab, 801 University Blvd SE Suite 100AlbuquerqueNM87106USA
2. Department of Electrical and Computer Engineering, Center for High Technology MaterialsUniversity of New MexicoAlbuquerqueNM87106USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.2073
Reference13 articles.
1. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
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3. Long‐wave infrared nBn photodetectors based on InAs/InAsSb type‐II superlattices;Kim H.S.;Appl. Phys. Lett.,2012
4. High performance photodiodes based on InAs/InAsSb type‐II superlattices for very long wavelength infrared detection;Hoang A.M.;Appl. Phys. Lett.,2014
5. Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
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