Dopingless super‐steep impact ionisation MOS (dopingless‐IMOS) based on work‐function engineering
Author:
Affiliation:
1. ECEPDPM‐IIITDMP.O.: Khamaria, Dumna Airport RoadJabalpurMadhya PradeshIndia
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.1072
Reference5 articles.
1. Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations
2. 100‐nm n‐/p‐channel I‐MOS using a novel self‐aligned structure;Choi W.Y.;Electron Device Lett.,2005
3. Fabrication and Characterization of the Charge-Plasma Diode
4. Bipolar charge plasma transistor: a novel three terminal device;Jagadesh Kumar M.;IEEE Trans. Electron Devices,2012
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