Increased static R ON in GaN‐on‐silicon power transistors under high‐side operation with floating substrate conditions
Author:
Affiliation:
1. Department of Electronic and Electrical EngineeringUniversity of SheffieldMappin StreetSheffieldS1 3JDUnited Kingdom
2. POWDEC K.K.1‐23‐15 Wakagi‐choOyama323‐0028TochigiJapan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.3723
Reference4 articles.
1. GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept
2. Compound Semiconductor: ‘POWDEC GaN transistor breaks barriers’. Available athttp://www.compoundsemiconductor.net/article/‐Powdec‐GaN‐transistor‐breaks‐barriers.html accessed March 2011
3. Investigation of buffer traps in AlGaN/GaN‐on‐Si devices by thermally stimulated current spectroscopy and back‐gating measurement;Yang S.S.;Appl. Phys. Lett.,2014
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1. PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors;IEEE Transactions on Power Electronics;2021-01
2. Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer;physica status solidi (a);2020-09-30
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