Low cost high voltage GaN polarization superjunction field effect transistors-Reference-Cited by-同舟云学术

Low cost high voltage GaN polarization superjunction field effect transistors

Published:2017-04-18 Issue:8 Volume:214 Page:1600834
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kawai H.¹,Yagi S.¹,Hirata S.¹,Nakamura F.¹,Saito T.¹,Kamiyama Y.¹,Yamamoto M.²,Amano H.³,Unni V.⁴,Narayanan E. M. S.⁴

Affiliation:

1. Powdec KK; 1-23-15 Wakagi-cho Oyama city Tochigi 323-0028 Japan

2. Shimane University; Matsue-shi Shimane 690-8504 Japan

3. Nagoya University; Furo-cho Chikusa-ku Nagoya 464-8601 Japan

4. University of Sheffield; Velocity 2, 3 Solly Street Sheffield S1 4DE UK

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

3. Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

4. GaN-Based Devices on Si

5. Prospects of III-nitride optoelectronics grown on Si

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