Improved Properties of A-Igzo Tft with Inorganic/Organic Stacked Passivation Layer

Author:

Chen longlong,Peng Cong,Xu Meng,Yang Shibo,Li Xifeng

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference20 articles.

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2. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper;M Kim;Applied Physics Letters,2007

3. Investigation of the Capacitance-Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment;H C Chen;ACS Applied Materials & Interfaces,2019

4. Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature;X Li;AIP Advances,2013

5. Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In-Ga-Zn-O Thin-Film Transistors;S G M Aman;IEEE Transactions on Electron Devices,2018

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