Investigation of the Capacitance–Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment-Reference-Cited by-同舟云学术

Investigation of the Capacitance–Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment

Published:2019-10-01 Issue:43 Volume:11 Page:40196-40203
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Hong-Chih¹,Kuo Chuan-Wei,Chang Ting-Chang^ORCID,Lai Wei-Chih¹^ORCID,Chen Po-Hsun²^ORCID,Chen Guan-Fu,Huang Shin-Ping,Chen Jian-Jie,Zhou Kuan-Ju,Shih Chih-Cheng,Tsao Yu-Ching,Huang Hui-Chun,Sze Simon M.³

Affiliation:

1. Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan, R. O. C

2. Department of Applied Science, Naval Academy, Kaohsiung 813, Taiwan, R. O. C

3. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R. O. C

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b11637