Effects of Uv/Ozone Treatment on the Performance of Pt/Ga2o3 Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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Effects of Uv/Ozone Treatment on the Performance of Pt/Ga2o3 Schottky Barrier Diodes

Published:2023 Issue: Volume: Page:
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Author:

Park Se-Rim,Kim Min-Yeong,Lee Tae-Hee,Chung Seung-Hwan,Moon Soo-Young,Lee Geon-Hee,Schweitz Michael A.,Koo Sang-Mo

Publisher

Elsevier BV

Reference25 articles.

1. A review of Ga2O3 materials, processing, and devices;S J Pearton;Appl. Phys. Rev,2018

2. Growth of ?-Ga2O3 single crystals by the edge-defined, film fed growth method;H Aida;Jpn. J. Appl. Phys,2008

3. Floating zone growth of ?-Ga2O3: a new window material for optoelectronic device applications;Y Tomm;Sol. Energy Mater Sol. Cells,2001

4. On the bulk ?-Ga2O3 single crystals grown by the Czochralski method;Z Galazka;J. Cryst. Growth,2014

5. Vertical Ga 2 O 3 Schottky barrier diodes with guard ring formed by nitrogen-ion implantation;C H Lin;IEEE Electron Device Lett,2019

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