Atomic Layer Chemical Vapor Deposition (ALCVD) of Hf and Zr Silicate and Aluminate High-k Gate Dielectric for Next Generation Nano Devices
Author:
Affiliation:
1. Laboratory for Advanced Molecular Processing, Department of Chemical Engineering, Pohang University of Science and Technology
Publisher
Society of Chemical Engineers, Japan
Subject
General Chemical Engineering,General Chemistry
Link
http://www.jstage.jst.go.jp/article/jcej/38/8/38_8_578/_pdf
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