MOCVD and Physicochemical Characterization of (HfO2)x(Al2O3)1-x Thin Films-Reference-Cited by-同舟云学术

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MOCVD and Physicochemical Characterization of (HfO2)x(Al2O3)1-x Thin Films

Published:2010-06-09 Issue:4-6 Volume:16 Page:185-190
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Smirnova Tamara P.,Lebedev Mikhail S.,Morozova Natalia B.,Semyannikov Peter P.,Zherikova Ksenia V.,Kaichev Vasily V.,Dubinin Yurii V.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference23 articles.

1. Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)

2. Study of the Surface Reactions in ALD Hafnium Aluminates

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100)

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