Modeling Thermal CVD.
Author:
Affiliation:
1. Institute of Advanced Material Study, Kyushu University
Publisher
Society of Chemical Engineers, Japan
Subject
General Chemical Engineering,General Chemistry
Link
http://www.jstage.jst.go.jp/article/jcej/35/8/35_8_701/_pdf
Reference47 articles.
1. Surface Reaction Rate during ZrO2 Thin Film Formation by MOCVD. Step coverage on micro-trenches.
2. Applicability of one‐dimensional diffusion model for step coverage analysis—Comparison with a simple Monte Carlo method
3. Gas-Phase Reaction Rate During ZrO2 Thin-Film Formation by LPMOCVD. Comparison of growth rate distributions obtained theoretically and experimentally.
4. Reaction analysis for ZrO2 and Y2O3 thin film growth by low-pressure metalorganic chemical vapor deposition using β-diketonate complexes
5. Shape of Film Grown on Microsize Trenches and Holes by Chemical Vapor Deposition: 3-Dimensional Monte Carlo Simulation
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3. Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique;Japanese Journal of Applied Physics;2008-10-17
4. Modeling Titanium Oxide Growth by Chemical Vapor Deposition Using Titanium Tetra Isopropoxide;JOURNAL OF CHEMICAL ENGINEERING OF JAPAN;2008
5. Epitaxial growth of lithium niobate film using metalorganic chemical vapor deposition;Thin Solid Films;2007-04
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