Gray-Box Model-Based Predictive Control of Czochralski Process with Successive Model Update
Author:
Affiliation:
1. Department of Systems Science, Kyoto University
2. Department of Applied Physics and Chemical Engineering, Tokyo University of Agriculture and Technology
3. SUMCO Corporation
Publisher
Society of Chemical Engineers, Japan
Subject
General Chemical Engineering,General Chemistry
Link
https://www.jstage.jst.go.jp/article/jcej/55/3/55_21we096/_pdf
Reference17 articles.
1. Derby, J. J., L. J. Atherton, P. D. Thomas and R. A. Brown; “Finite-element Methods for Analysis of the Dynamics and Control of Czochralski Crystal Growth,” J. Sci. Comput., 2, 297–343 (1987)
2. Gevelber, M. A. and G. Stephanopoulos; “Dynamics and Control of the Czochralski Process. I. Modelling and Dynamic Characterization,” J. Cryst. Growth, 84, 647–668 (1987)
3. Kato, S., S. Kim, M. Kano, T. Fujiwara and M. Mizuta; “Gray-Box Modeling of 300 mm Diameter Czochralski Single-Crystal Si Production Process,” J. Cryst. Growth, 553, 125929 (2021a)
4. Kato, S., S. Kim, M. Mizuta, M. Oshima and M. Kano; “Gray-Box Model-Based Predictive Control of Czochralski Process,” J. Cryst. Growth, 573, 126299 (2021b)
5. Kondratyev, A., S. Demina, A. Smirnov, V. Kalaev, G. Ratnieks, L. Kadinski and A. Sattler; “3D Unsteady and Steady Modeling of Heat and Mass Transfer during Cz Si Crystal Growth with a Horizontal Magnetic Field,” Int. J. Heat Mass Transf., 178, 121604 (2021)
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